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JMAR Awarded Contract For X-Ray Mask And Nanolithography Program

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by Staff Writers
San Diego (SPX) Aug 18, 2006
JMAR Technologies has received a $3.1 million award by Naval Air Systems Command (NAVAIR). This is the latest increment to be added to JMAR's current contract, valued at $17.5 million, to continue development of sub-100nm feature x-ray masks and next generation nanolithography.

Under this contract, JMAR will use its patented x-ray stepper and point source technologies to develop x-ray masks for fabrication of high-speed C-RAM with 50-35 nanometer features, enabling 16 megabyte and higher densities for high-priority military and space applications.

Three JMAR X-Ray Lithography (XRL) stepper systems will be used in the development of these and other next-generation memory devices. The C-RAM program is a joint Navy/Air Force development effort for radiation-hardened, low power, silicon memory devices. This advanced technology has several commercial applications: as memory densities increase, C-RAM will be a faster, lower power replacement for non-volatile memory applications currently using Flash memory in cell phones, portable computers and solid-state mechanical hard disks.

"This effort, merging world-class x-ray mask technology with nanolithography, will provide practical applications for everyday use, while supporting important military and commercial development programs," said Dr. Neil Beer, president and CEO of JMAR.

"The ongoing development of XRL nanotechnology through government funding demonstrates the growing number of applications for our technology products and legacy pipeline," Dr. Beer added.

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